2N6301E3
Microchip Technology
Microchip Technology
TRANS NPN DARL 80V 500UA TO66
$29.43
Available to order
Reference Price (USD)
1+
$29.43000
500+
$29.1357
1000+
$28.8414
1500+
$28.5471
2000+
$28.2528
2500+
$27.9585
Exquisite packaging
Discount
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The 2N6301E3 Bipolar Junction Transistor (BJT) from Microchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N6301E3 is a reliable component for demanding applications. Microchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 µA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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