2N6308T1
Microchip Technology
Microchip Technology
POWER BJT
$335.78
Available to order
Reference Price (USD)
1+
$335.77500
500+
$332.41725
1000+
$329.0595
1500+
$325.70175
2000+
$322.344
2500+
$318.98625
Exquisite packaging
Discount
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The 2N6308T1 Bipolar Junction Transistor (BJT) from Microchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2N6308T1 is a reliable component for demanding applications. Microchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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