2N6351E3
Microchip Technology
Microchip Technology
POWER BJT
$29.70
Available to order
Reference Price (USD)
1+
$29.70000
500+
$29.403
1000+
$29.106
1500+
$28.809
2000+
$28.512
2500+
$28.215
Exquisite packaging
Discount
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Discover the 2N6351E3 Bipolar Junction Transistor (BJT) from Microchip Technology, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2N6351E3 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Microchip Technology for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AC, TO-33-4 Metal Can
- Supplier Device Package: TO-33
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