2N7002P,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
$0.27
Available to order
Reference Price (USD)
1+
$0.27000
500+
$0.2673
1000+
$0.2646
1500+
$0.2619
2000+
$0.2592
2500+
$0.2565
Exquisite packaging
Discount
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The 2N7002P,215 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the 2N7002P,215 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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