2N7369
Microchip Technology
Microchip Technology
POWER BJT
$312.40
Available to order
Reference Price (USD)
1+
$312.40500
500+
$309.28095
1000+
$306.1569
1500+
$303.03285
2000+
$299.9088
2500+
$296.78475
Exquisite packaging
Discount
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Enhance your circuit designs with the 2N7369 Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2N7369 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
- Power - Max: 115 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: TO-254
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