2PB709BRL,215
NXP Semiconductors
NXP Semiconductors
NEXPERIA 2PB709 - SMALL SIGNAL B
$0.03
Available to order
Reference Price (USD)
3,000+
$0.04968
Exquisite packaging
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Enhance your circuit designs with the 2PB709BRL,215 Bipolar Junction Transistor (BJT) from NXP Semiconductors. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2PB709BRL,215 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP Semiconductors to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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