2PD602AS,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN 50V 0.5A SMT3
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
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The 2PD602AS,115 Bipolar Junction Transistor (BJT) from NXP USA Inc. is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2PD602AS,115 is a reliable component for demanding applications. NXP USA Inc.'s dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
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