2SA1182-Y,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 30V 0.5A SMINI
$0.33
Available to order
Reference Price (USD)
3,000+
$0.06038
Exquisite packaging
Discount
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Discover the 2SA1182-Y,LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SA1182-Y,LF is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Toshiba Semiconductor and Storage for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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