2SA1618-Y(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP 50V 0.15A SMV
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.07938
15,000+
$0.07056
30,000+
$0.06615
75,000+
$0.05880
Exquisite packaging
Discount
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Precision meets power in the 2SA1618-Y(TE85L,F) BJT Array by Toshiba Semiconductor and Storage. Specifically engineered for Class-B audio amplifiers and active filters, this Discrete Semiconductor Product delivers THD<0.1% for studio-grade sound reproduction. Telecommunications infrastructure and test equipment manufacturers rely on its stable beta characteristics across temperature ranges. The 2SA1618-Y(TE85L,F) comes with anti-oxidation terminals, ensuring solderability even after prolonged storage.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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