2SA1721OTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 300V 0.1A SMINI
$0.12
Available to order
Reference Price (USD)
3,000+
$0.12301
Exquisite packaging
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Enhance your circuit designs with the 2SA1721OTE85LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SA1721OTE85LF is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Toshiba Semiconductor and Storage to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
- Power - Max: 150 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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