2SA1832-GR,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 0.15A SSM
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
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The 2SA1832-GR,LXHF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SA1832-GR,LXHF provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 120 mW
- Frequency - Transition: 80MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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