2SA1955FVBTPL3Z
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 12V 0.4A VESM
$0.12
Available to order
Reference Price (USD)
8,000+
$0.06757
Exquisite packaging
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Discover the 2SA1955FVBTPL3Z Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SA1955FVBTPL3Z is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Toshiba Semiconductor and Storage for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 400 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 100 mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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