2SA2060(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 2A PW-MINI
$0.25
Available to order
Reference Price (USD)
1+
$0.24507
500+
$0.2426193
1000+
$0.2401686
1500+
$0.2377179
2000+
$0.2352672
2500+
$0.2328165
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SA2060(TE12L,F) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SA2060(TE12L,F) is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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