2SA2070(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 1A PW-MINI
$0.21
Available to order
Reference Price (USD)
1+
$0.21444
500+
$0.2122956
1000+
$0.2101512
1500+
$0.2080068
2000+
$0.2058624
2500+
$0.203718
Exquisite packaging
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Upgrade your electronic designs with the 2SA2070(TE12L,F) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SA2070(TE12L,F) is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Toshiba Semiconductor and Storage for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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