2SA2097(TE16L1,NQ)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 5A PW-MOLD
$0.32
Available to order
Reference Price (USD)
1+
$0.31816
500+
$0.3149784
1000+
$0.3117968
1500+
$0.3086152
2000+
$0.3054336
2500+
$0.302252
Exquisite packaging
Discount
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Experience unmatched performance with the 2SA2097(TE16L1,NQ) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SA2097(TE16L1,NQ) delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Toshiba Semiconductor and Storage for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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