2SA2195,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 1.7A UFM
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
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Enhance your circuit designs with the 2SA2195,LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SA2195,LF is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Toshiba Semiconductor and Storage to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.7 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: UFM
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