2SB1032K-E
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR, PNP
$3.07
Available to order
Reference Price (USD)
1+
$3.07000
500+
$3.0393
1000+
$3.0086
1500+
$2.9779
2000+
$2.9472
2500+
$2.9165
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the 2SB1032K-E Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SB1032K-E is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Renesas Electronics America Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
onsemi
TIP125G
onsemi
NJVMJD117T4G
Rohm Semiconductor
2SC3837KT146N
onsemi
2SB1122T-TD-E
Fairchild Semiconductor
BC32825
NTE Electronics, Inc
NTE180
onsemi
KSP92BU
Nexperia USA Inc.
BC807K-16VL
Nexperia USA Inc.
PBSS4160XF
Fairchild Semiconductor