2SB1259
Sanken
Sanken
TRANS PNP DARL 120V 10A TO220F
$2.06
Available to order
Reference Price (USD)
1+
$1.92000
10+
$1.73500
25+
$1.54880
100+
$1.39390
250+
$1.23900
500+
$1.08412
1,000+
$0.89828
2,500+
$0.83632
5,000+
$0.82600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the 2SB1259 Bipolar Junction Transistor (BJT) from Sanken. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SB1259 delivers superior performance in diverse environments. Sanken's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 5A, 4V
- Power - Max: 30 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
Related Products
onsemi
2SA2124-S-TD-E
Diodes Incorporated
BC807-40Q-7-F
onsemi
SBC846BPDW1T1
Microchip Technology
2N6232
onsemi
MJW21193G
Microchip Technology
JANSM2N2369AUB/TR
NTE Electronics, Inc
2N5039
Central Semiconductor Corp
TIP32 PBFREE
Infineon Technologies
BDP950H6327XTSA1
Nexperia USA Inc.