2SB1260T100R
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 80V 1A MPT3
$0.57
Available to order
Reference Price (USD)
1,000+
$0.18020
2,000+
$0.16430
5,000+
$0.15370
10,000+
$0.14840
Exquisite packaging
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Enhance your circuit designs with the 2SB1260T100R Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SB1260T100R is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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