2SB815-7-TB-E
onsemi
onsemi
TRANS PNP 15V 0.7A 3CP
$0.40
Available to order
Reference Price (USD)
3,000+
$0.10257
6,000+
$0.09713
15,000+
$0.08897
30,000+
$0.08353
75,000+
$0.07718
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SB815-7-TB-E Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SB815-7-TB-E is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
- Power - Max: 200 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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