2SB906-Y(TE16L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 60V 3A PW-MOLD
$1.25
Available to order
Reference Price (USD)
2,000+
$0.45717
6,000+
$0.43540
Exquisite packaging
Discount
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The 2SB906-Y(TE16L1,NQ by Toshiba Semiconductor and Storage is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2SB906-Y(TE16L1,NQ ensures efficient and stable operation. Backed by Toshiba Semiconductor and Storage's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 9MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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