2SB955K-E
Renesas Electronics America Inc

Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR, PNP
$2.11
Available to order
Reference Price (USD)
1+
$2.11000
500+
$2.0889
1000+
$2.0678
1500+
$2.0467
2000+
$2.0256
2500+
$2.0045
Exquisite packaging
Discount
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Experience unmatched performance with the 2SB955K-E Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SB955K-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Renesas Electronics America Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -