2SC3303-Y(T6L1,NQ)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 80V 5A PW-MOLD
$0.60
Available to order
Reference Price (USD)
1+
$0.59700
500+
$0.59103
1000+
$0.58506
1500+
$0.57909
2000+
$0.57312
2500+
$0.56715
Exquisite packaging
Discount
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The 2SC3303-Y(T6L1,NQ) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SC3303-Y(T6L1,NQ) provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD
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