2SC3326-B,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 20V 0.3A TO236
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07560
6,000+
$0.06804
15,000+
$0.06048
30,000+
$0.05670
75,000+
$0.05040
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC3326-B,LF from Toshiba Semiconductor and Storage is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SC3326-B,LF is a reliable choice for both commercial and industrial use. Trust Toshiba Semiconductor and Storage to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 150 mW
- Frequency - Transition: 30MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236
Related Products
onsemi
KSP44TA
NXP USA Inc.
BCX17/DG/B4215
Diotec Semiconductor
2SCR544R
NTE Electronics, Inc
NTE272
Micro Commercial Co
MMBT3906-TP
Panjit International Inc.
MMBT3906_R1_00001
Diodes Incorporated
ZXTP19020DGTA
Toshiba Semiconductor and Storage
2SC4116-BL,LXHF
Infineon Technologies
BFN27E6327HTSA1
onsemi