2SC3646S-P-TD-E
onsemi
onsemi
TRANS NPN 100V 1A
$0.25
Available to order
Reference Price (USD)
1,000+
$0.29988
Exquisite packaging
Discount
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Discover the 2SC3646S-P-TD-E Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the 2SC3646S-P-TD-E is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 120MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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