2SC4102U3HZGT106R
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 120V 0.05A UMT3
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
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Upgrade your electronic designs with the 2SC4102U3HZGT106R Bipolar Junction Transistor (BJT) by Rohm Semiconductor. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SC4102U3HZGT106R is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Rohm Semiconductor for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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