2SC4117-BL,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 120V 0.1A SC70
$0.24
Available to order
Reference Price (USD)
3,000+
$0.04106
6,000+
$0.03570
15,000+
$0.03035
30,000+
$0.02856
75,000+
$0.02678
150,000+
$0.02380
Exquisite packaging
Discount
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Optimize your electronic systems with the 2SC4117-BL,LF Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SC4117-BL,LF delivers superior performance in diverse environments. Toshiba Semiconductor and Storage's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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