2SC5012-T1-A
CEL
CEL
RF TRANS NPN 10V 9GHZ SOT343
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the 2SC5012-T1-A, a high-efficiency Bipolar Junction Transistor (BJT) from CEL. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The 2SC5012-T1-A offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose CEL for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 15dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
Related Products
Toshiba Semiconductor and Storage
2SC5096-R,LF
MACOM Technology Solutions
MRF10350
Central Semiconductor Corp
CM5583
Analog Devices Inc./Maxim Integrated
MAX2602ESA-T
Infineon Technologies
BFR 380T E6327
Infineon Technologies
BFQ19SH6359XTMA1
Infineon Technologies
BFP460H6433XTMA1
onsemi
KSC1674RTA
onsemi
KSC2786YBU
onsemi