2SC5084YTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SC59
$0.00
Available to order
Reference Price (USD)
1+
$0.48000
10+
$0.37500
25+
$0.31640
100+
$0.25740
250+
$0.21328
500+
$0.17650
Exquisite packaging
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The 2SC5084YTE85LF from Toshiba Semiconductor and Storage is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 2SC5084YTE85LF is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Toshiba Semiconductor and Storage for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 11dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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