2SC5310-6-TB-E
onsemi
onsemi
NPN EPITAXIAL PLANAR SILICON
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC5310-6-TB-E from onsemi is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SC5310-6-TB-E is a reliable choice for both commercial and industrial use. Trust onsemi to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Diodes Incorporated
BC53-16PA-7
Microchip Technology
2N6187
onsemi
2SD2201R-DL-E
Micro Commercial Co
BC846BHE3-TP
Microchip Technology
2N1490
Microchip Technology
JAN2N3749
onsemi
2SD1800-TL-E
Microchip Technology
2N6381
Microchip Technology
JANSD2N2222A
Microchip Technology