2SC5876U3HZGT106Q
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 60V 0.5A UMT3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.12342
6,000+
$0.11594
15,000+
$0.10846
30,000+
$0.10472
Exquisite packaging
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Experience unmatched performance with the 2SC5876U3HZGT106Q Bipolar Junction Transistor (BJT) by Rohm Semiconductor. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SC5876U3HZGT106Q delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Rohm Semiconductor for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 200 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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