2SC5964-S-TD-E
onsemi
onsemi
TRANS NPN 50V 3A PCP
$0.13
Available to order
Reference Price (USD)
3,000+
$0.09771
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2SC5964-S-TD-E Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SC5964-S-TD-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.3 W
- Frequency - Transition: 380MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
Related Products
Toshiba Semiconductor and Storage
2SA1955FVATPL3Z
Renesas Electronics America Inc
2SA673AKC04-E
Micro Commercial Co
BCP51-16-TP
onsemi
BCP53T1G
Fairchild Semiconductor
BC637
Yangzhou Yangjie Electronic Technology Co.,Ltd
BC807-25W-F2-0000HF
onsemi
NSV60200LT1G
Central Semiconductor Corp
2N697A PBFREE
Central Semiconductor Corp
2N5089 PBFREE
onsemi