2SC6026MFVGR,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.15A VESM
$0.21
Available to order
Reference Price (USD)
8,000+
$0.03150
16,000+
$0.02678
24,000+
$0.02520
56,000+
$0.02363
200,000+
$0.02100
Exquisite packaging
Discount
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The 2SC6026MFVGR,L3F Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SC6026MFVGR,L3F provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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