2SC6076(TE16L1,NV)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 80V 3A PW-MOLD
$0.65
Available to order
Reference Price (USD)
2,000+
$0.22785
6,000+
$0.21315
10,000+
$0.19845
50,000+
$0.19600
Exquisite packaging
Discount
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The 2SC6076(TE16L1,NV) from Toshiba Semiconductor and Storage is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the 2SC6076(TE16L1,NV) is a reliable choice for both commercial and industrial use. Trust Toshiba Semiconductor and Storage to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 10 W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
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