2SC6096-TD-E
onsemi
onsemi
TRANS NPN 100V 2A PCP
$0.70
Available to order
Reference Price (USD)
1,000+
$0.28320
2,000+
$0.25800
5,000+
$0.24120
10,000+
$0.23840
Exquisite packaging
Discount
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Upgrade your electronic designs with the 2SC6096-TD-E Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the 2SC6096-TD-E is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
- Power - Max: 1.3 W
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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