2SCR567F3TR
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 120V 2.5A HUML2020L3
$0.53
Available to order
Reference Price (USD)
1+
$0.53250
500+
$0.527175
1000+
$0.52185
1500+
$0.516525
2000+
$0.5112
2500+
$0.505875
Exquisite packaging
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Enhance your circuit designs with the 2SCR567F3TR Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SCR567F3TR is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 80mA, 800mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
- Power - Max: 1 W
- Frequency - Transition: 220MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN Exposed Pad
- Supplier Device Package: HUML2020L3
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