2SD1691-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER BIPOLAR TRANSISTOR NPN
$0.56
Available to order
Reference Price (USD)
1+
$0.56000
500+
$0.5544
1000+
$0.5488
1500+
$0.5432
2000+
$0.5376
2500+
$0.532
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SD1691-AZ Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SD1691-AZ is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Renesas Electronics America Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
NTE Electronics, Inc
NTE2308
Rohm Semiconductor
2SC3837KT146P
onsemi
MMBT4403LT1G
Panjit International Inc.
MMBTA92-AU_R1_000A1
Nexperia USA Inc.
BCV48,115
Microchip Technology
JAN2N3440L
Fairchild Semiconductor
BC858C
Fairchild Semiconductor
KSB1116SYTA
Micro Commercial Co
MMBTA13-TP
Ampleon USA Inc.