2SD1805G-E
onsemi

onsemi
TRANS NPN 20V 5A TP
$0.27
Available to order
Reference Price (USD)
1+
$0.68000
10+
$0.59600
100+
$0.45720
500+
$0.36142
1,000+
$0.28913
Exquisite packaging
Discount
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The 2SD1805G-E by onsemi is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the 2SD1805G-E ensures efficient and stable operation. Backed by onsemi's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP