2SD2351T106W
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 50V 0.15A UMT3
$0.40
Available to order
Reference Price (USD)
3,000+
$0.10080
6,000+
$0.09520
15,000+
$0.08680
30,000+
$0.08120
75,000+
$0.07840
Exquisite packaging
Discount
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The 2SD2351T106W Bipolar Junction Transistor (BJT) by Rohm Semiconductor is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the 2SD2351T106W provides consistent performance in demanding applications. Choose Rohm Semiconductor for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 300nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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