2SD2707T2LV
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 50V 0.15A VMT3
$0.44
Available to order
Reference Price (USD)
8,000+
$0.09595
16,000+
$0.08976
24,000+
$0.08666
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the 2SD2707T2LV Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2SD2707T2LV is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 300nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 1mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
Related Products
STMicroelectronics
2STF1360
NXP USA Inc.
PBSS5240X115
Diodes Incorporated
ZTX718STZ
Microchip Technology
JANS2N3868S
Fairchild Semiconductor
2SA608NG-NPA-AT
Texas Instruments
LM395T/NOPB
Infineon Technologies
BC847BWE6327
Nexperia USA Inc.
BC857BM,315
NXP USA Inc.
BC858W,115
Nexperia USA Inc.