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2SJ305TE85LF

Toshiba Semiconductor and Storage
2SJ305TE85LF Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 200MA SC59
$0.57
Available to order
Reference Price (USD)
3,000+
$0.18290
6,000+
$0.17110
15,000+
$0.16520
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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