2SJ555-90-E
Renesas Electronics America Inc
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
$4.76
Available to order
Reference Price (USD)
1+
$4.76000
500+
$4.7124
1000+
$4.6648
1500+
$4.6172
2000+
$4.5696
2500+
$4.522
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SJ555-90-E from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the 2SJ555-90-E offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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