2SJ660-DL-E
onsemi
onsemi
PCH 4V DRIVE SERIES
$1.50
Available to order
Reference Price (USD)
1+
$1.50000
500+
$1.485
1000+
$1.47
1500+
$1.455
2000+
$1.44
2500+
$1.425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the 2SJ660-DL-E RF MOSFET from onsemi (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The 2SJ660-DL-E's advanced design ensures maximum power transfer with minimal distortion. With onsemi's expertise in semiconductor innovation, the 2SJ660-DL-E provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Freescale Semiconductor
MRF5S9150HR5
NXP USA Inc.
A2T21H360-24SR6
Freescale Semiconductor
MRFG35005NT1
Wolfspeed, Inc.
GTVA101K42EV-V1-R250
NXP USA Inc.
A3T21H360W23SR6
Ampleon USA Inc.
BLC9G22XS-120AGWTY
Freescale Semiconductor
MRF8S18120HR3
NXP USA Inc.
A2T27S020GNR1
onsemi
FC18G-TL
Freescale Semiconductor