2SK208-O(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 50V SC59
$0.52
Available to order
Reference Price (USD)
3,000+
$0.13365
6,000+
$0.12555
15,000+
$0.11745
30,000+
$0.11340
Exquisite packaging
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Introducing the 2SK208-O(TE85L,F) from Toshiba Semiconductor and Storage's premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the 2SK208-O(TE85L,F) in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
- Current Drain (Id) - Max: 6.5 mA
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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