2SK3666-3-TB-E
onsemi
onsemi
JFET N-CH 10MA 200MW 3CP
$0.06
Available to order
Reference Price (USD)
3,000+
$0.09614
6,000+
$0.08653
15,000+
$0.07691
30,000+
$0.07211
75,000+
$0.06393
150,000+
$0.06153
Exquisite packaging
Discount
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The 2SK3666-3-TB-E JFET transistor by onsemi exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the 2SK3666-3-TB-E has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 200 Ohms
- Power - Max: 200 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
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