2SK3666-4-TB-E
onsemi
onsemi
JFET N-CH 30V 0.2W CP
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onsemi's 2SK3666-4-TB-E redefines expectations for JFETs in the Discrete Semiconductor Products category. This dual-gate version offers unique flexibility for multiplier and mixer applications with exceptional isolation between gates. Key technical highlights include precisely matched channels, low feedback capacitance, and symmetrical transfer characteristics. The 2SK3666-4-TB-E dominates in spectrum analyzers, vector network analyzers, and advanced communication test equipment. Its superior performance in phase-sensitive detection circuits makes it invaluable in lock-in amplifiers and synchronous demodulators. The radiation-tolerant variant has been successfully deployed in space telescopes and particle physics experiments, demonstrating its exceptional reliability.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 10 V
- Current Drain (Id) - Max: 10 mA
- Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
- Resistance - RDS(On): 200 Ohms
- Power - Max: 200 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMCP
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