2SK3993-ZK-E1-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 25V 64A TO252
$1.52
Available to order
Reference Price (USD)
1+
$1.52000
500+
$1.5048
1000+
$1.4896
1500+
$1.4744
2000+
$1.4592
2500+
$1.444
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the 2SK3993-ZK-E1-AZ single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's 2SK3993-ZK-E1-AZ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3Z)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Renesas Electronics America Inc
2SK1835-E
Diodes Incorporated
DMN2028UFDF-7
onsemi
CPH6603-TL-E
Panjit International Inc.
PJP35N06A_T0_00001
Infineon Technologies
IPI100N06S3L-03
NXP USA Inc.
BUK7631-100E,118
Toshiba Semiconductor and Storage
TK58E06N1,S1X
Microchip Technology
APT1201R4BFLLG
Fairchild Semiconductor
HUF76437P3
Renesas Electronics America Inc