2ST501T
STMicroelectronics
STMicroelectronics
TRANS NPN DARL 350V 4A TO220
$1.59
Available to order
Reference Price (USD)
1+
$1.46000
50+
$1.23480
100+
$1.01430
500+
$0.83790
1,000+
$0.66150
2,500+
$0.61740
5,000+
$0.58800
Exquisite packaging
Discount
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Optimize your electronic systems with the 2ST501T Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2ST501T delivers superior performance in diverse environments. STMicroelectronics's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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