2STC4467
STMicroelectronics
STMicroelectronics
TRANS NPN 120V 8A TO3P
$2.63
Available to order
Reference Price (USD)
1+
$2.77000
10+
$2.48500
300+
$1.87530
600+
$1.64088
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2STC4467 Bipolar Junction Transistor (BJT) from STMicroelectronics is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the 2STC4467 is a reliable component for demanding applications. STMicroelectronics's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
- Power - Max: 80 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
onsemi
2SC3950D
Rohm Semiconductor
2SAR552PT100
Nexperia USA Inc.
BC817-25W,135
Fairchild Semiconductor
KSC945YBU
NTE Electronics, Inc
NTE11
Nexperia USA Inc.
BC807-25QAZ
Microchip Technology
JANSM2N3635
onsemi
MJ2955G
onsemi
2N6388G
Infineon Technologies