30A02MH-TL-E
onsemi
onsemi
TRANS PNP 30V 0.7A 3MCPH
$0.10
Available to order
Reference Price (USD)
3,000+
$0.10395
Exquisite packaging
Discount
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Experience unmatched performance with the 30A02MH-TL-E Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 30A02MH-TL-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 520MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-MCPH
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